PART |
Description |
Maker |
SI2304DS |
30 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
|
TY Semiconductor Co., Ltd
|
KO3402 AO3402 |
VDS (V) = 30V ID= 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)
|
TY Semiconductor Co., Ltd
|
KX020N06 |
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V)
|
TY Semiconductor Co., L...
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SI5903DC SI5903DC-T1 |
Dual P-Channel 2.5-V (G-S) MOSFET 双P沟道.5 VGS)的MOSFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled 5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc. ICE COMPONENTS INC
|
FDB060AN08A0 FDP060AN08A0 FDP060AN08A0NL FDB060AN0 |
N-Channel PowerTrench MOSFET 75V, 80A, 6.0m?/a> N-Channel PowerTrench MOSFET 75V, 80A, 6.0mз Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-220AB Package Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package
|
FAIRCHILD[Fairchild Semiconductor]
|
SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg,快速开关WFET ® ,VDS=30V; VGS=±20V N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
SI4825DY |
P-Channel 30-V (D-S) MOSFET P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
FDP3682 FDB3682 FDP3682NL |
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m N-Channel PowerTrench MOSFET 100V, 32A, 36mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package
|
Fairchild Semiconductor
|
FDJ1028N06 FDJ1028N FDJ1028NNL |
20V N-Channel 2.5Vgs Specified PowerTrench MOSFET N-Channel 2.5 Vgs Specified PowerTrench MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压 MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc. ADMOS[Advanced Monolithic Systems]
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